X-ray determination of strain in ion implanted GaN

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 190, Issue 1-4, 2002, Pages 878-881

  Qadri, S B ^a   Molnar, B ^a   Yousuf, M ^a   Carosella, C A ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

GaN; Ion implantation; X ray diffraction

Indexed keywords

AMORPHOUS MATERIALS; ION IMPLANTATION; LATTICE CONSTANTS; SAPPHIRE; SEMICONDUCTING FILMS; X RAY DIFFRACTION ANALYSIS;

AMORPHOUS LAYERS;

GALLIUM NITRIDE;

EID: 0036569297     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)01189-2     Document Type: Conference Paper

References (10)