Thinning of N-face GaN (000 1 -) samples by inductively coupled plasma etching and chemomechanical polishing

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 25, Issue 2, 2007, Pages 252-260

  Rizzi, F ^a   Gu, E ^a   Dawson, M D ^a   Watson, I M ^a   Martin, R W ^a   Kang, X N ^b   Zhang, G Y ^b  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

INDUCTIVELY COUPLED PLASMA; PLASMA ETCHING; RECOVERY; SCANNING ELECTRON MICROSCOPY; SURFACE MORPHOLOGY; SURFACE ROUGHNESS;

CHEMOMECHANICAL POLISHING; INDUCTIVELY COUPLED PLASMA ETCHING; STYLUS PROFILING;

GALLIUM NITRIDE;

EID: 33947324619     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2433987     Document Type: Article

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