Dielectric microcavity in GaN/Si

Physica Status Solidi (A) Applied Research

Volumn 183, Issue 1, 2001, Pages 35-39

  Duboz, J Y ^a   Dua, L ^a   Glastre, G ^a   Legagneux, P ^a   Massies, J ^b   Semond, F ^b   Grandjean, N ^b  

^a THALES   (France)

^b CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; PHOTOLUMINESCENCE; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SUBSTRATES;

DIELECTRIC MICROCAVITY; DIELECTRIC MIRROR;

GALLIUM NITRIDE;

EID: 0035120055     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200101)183:1<35::AID-PSSA35>3.0.CO;2-9     Document Type: Article

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