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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 2195-2198

Comparative optical studies on violet InGaN quantum well laser diode structures grown on sapphire and GaN substrates

(10) Hwang, J S a Choi, J W a Gokarnal, A a Cho, Y H a Son, J K b Lee, S N b Sakong, T b Pack, H S b Nam, O H b Park, Y b

a Chungbuk National University (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GAN CAPPING; GAN SUBSTRATES; PIEZOELECTRIC FIELDS; STOKES-LIKE SHIFT; 42.55.PX; 68.65.FG; 77.65.LY; 78.55.CR; 78.67.PT;

GALLIUM NITRIDE; LIGHT ABSORPTION; PHOTOLUMINESCENCE; PIEZOELECTRICITY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; GALLIUM ALLOYS; OPTICAL PROPERTIES; QUANTUM WELL LASERS; SAPPHIRE;

QUANTUM WELL LASERS; SUBSTRATES;

EID: 33746383060 PISSN: 18626351 EISSN: None Source Type: Journal
DOI: 10.1002/pssc.200565351 Document Type: Conference Paper

Times cited : (1)

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