Substrates for wide bandgap nitrides

Journal of Materials Science: Materials in Electronics

Volumn 13, Issue 11, 2002, Pages 659-664

  Seyboth, Matthias ^a   Schad, S S ^a   Scherer, M ^a   Habel, F ^a   Eichler, C ^a   Kamp, M ^b   Schwegler, V ^b  

^a UNIVERSITY OF ULM   (Germany)

^b GLI Global Light Industries GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; EPITAXIAL GROWTH; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES;

BANDGAP;

GALLIUM NITRIDE;

EID: 0036863049     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1020614310842     Document Type: Article

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