Wavelength dispersive X-ray analysis and cathodoluminescence techniques for monitoring the chemical removal of AlInN on an N-face GaN surface

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 369-372

  Rizzi, F ^a   Edwards, P R ^a   Watson, I M ^a   Martin, R W ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

AlInN; Cathodoluminescence; GaN; Wavelength dispersive X ray analysis; Wet etching

Indexed keywords

CATHODOLUMINESCENCE; CHARGE COUPLED DEVICES; CRYSTAL LATTICES; ETCHING; GALLIUM NITRIDE; SOLUTIONS; X RAY ANALYSIS;

CATHODOLUMINESCENCE SPECTRA; ELECTRON PROBE MICRO-ANALYZER; SEMICONDUCTOR LAYERS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33845207396     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.07.007     Document Type: Article

References (6)

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4. Martin R.W., Edwards P.R., Kim H.-S., Kim K.-S., Kim T., Watson I.M., Dawson M.D., Cho Y., Sands T., and Cheung N.W. Appl. Phys. Lett. 79 (2001) 3029
5. F. Rizzi, E. Gu, M.D. Dawson, I.M. Watson, R.W. Martin, X.N. Kang, G.Y. Zhang, J. Vac. Sci. Technol. A (submitted for publication)
6. F. Rizzi, K. Bejtka, F. Semond, E. Gu, M.D. Dawson, I.M. Watson, R.W. Martin, Phys. Status Solidi c (submitted for publication)