High etch rate gallium nitride processing using an inductively coupled plasma source

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 743-746

  Ryan, M E ^a   Camacho, A C ^a   Bhardwaj, J K ^a  

^a Surface Technology Systems Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; BORON COMPOUNDS; CHLORINE; LIGHT EMITTING DIODES; NITRIDES; PLASMA ETCHING; SEMICONDUCTOR LASERS;

INDUCTIVELY COUPLED PLASMA (ICP);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033221350     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<743::AID-PSSA743>3.0.CO;2-E     Document Type: Article

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