Surface properties of GaN fabricated by laser lift-off and ICP etching

Journal of the Korean Physical Society

Volumn 40, Issue 4, 2002, Pages 567-571

  Kim, Hyeon Soo ^a,b   Dawson, Martin D ^a   Yeom, Geun Young ^c  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b SAMSUNG Electronics   (South Korea)

^c Sungkyunkwan University   (South Korea)

Author keywords

GaN; ICP Etching; Laser lift off; VCSEL

Indexed keywords

EID: 0036012663     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.40.567     Document Type: Conference Paper

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