Optical spectroscopy of GaN microcavities with thicknesses controlled using a plasma etchback

Applied Physics Letters

Volumn 79, Issue 19, 2001, Pages 3029-3031

  Martin, R W ^a   Edwards, P R ^a   Kim, H S ^a,d   Kim, K S ^a   Kim, T ^a,e   Watson, I M ^a   Dawson, M D ^a   Cho, Y ^b   Sands, T ^b   Cheung, N W ^c  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b Lawrence Berkeley National Laboratory   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d SAMSUNG Electronics   (South Korea)

^e Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 18044399253     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1415769     Document Type: Article

References (11)

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