Turning the world vertical: MOSFETs with current flow perpendicular to the wafer surface

Applied Physics A: Materials Science and Processing

Volumn 87, Issue 3, 2007, Pages 531-537

  Moers, J ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); INTEGRATED CIRCUITS; LITHOGRAPHY; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

DEVICE SCALING; INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS (ITRS); LAYER DEPOSITION; TECHNOLOGICAL REQUIREMENTS;

MOSFET DEVICES;

EID: 33947201126     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-007-3986-9     Document Type: Article

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