Short-channel vertical sidewall MOSFETs

IEEE Transactions on Electron Devices

Volumn 48, Issue 8, 2001, Pages 1783-1788

  Schulz, Thomas ^b   Rösner, Wolfgang ^b   Risch, Lothar ^b   Korbel, Adam ^a,c   Langmann, Ulrich ^a,c  

^a IEEE

^b INFINEON TECHNOLOGIES AG   (Germany)

^c RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

3 D arrangement; CMOS; Lithography independence; Scaling; Sidewall transistor; Sub 0.1 m; Vertical MOSFET

Indexed keywords

CARRIER MOBILITY; DRY ETCHING; ELECTRON TUNNELING; LITHOGRAPHY; MASKS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

LITHOGRAPHY INDEPENDENCE; THREE DIMENSIONAL ARRANGEMENT; TUNNELING CURRENTS; VERTICAL WALL MOSFETS;

MOSFET DEVICES;

EID: 0035424985     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.936708     Document Type: Conference Paper

References (19)

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