Selectively grown vertical Si-p MOS transistor with short channel lengths

Electronics Letters

Volumn 32, Issue 4, 1996, Pages 406-407

  Behammer, D ^a   Vescan, L ^b   Loo, R ^b   Moers, J ^b   Muck A ^b   Luth H ^b   Grabolla, T ^c  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c IHP   (Germany)

Author keywords

MOSFET; Silicon germanium

Indexed keywords

BIPOLAR TRANSISTORS; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; LITHOGRAPHY; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; TRANSCONDUCTANCE;

ANISOTROPIC REACTIVE ION ETCHING; DRAIN CURRENT CHARACTERISTICS; HIGH PRESSURE OXIDATION; IN SITU DOPED POLYSILICON; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; SELECTIVE EPITAXIAL GROWTH; THERMAL OXIDATION; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0030084879     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960248     Document Type: Article

References (4)

1. HORI. A., NAKAOKA, H., UMIMOTO, H., YAMASHITA, K., TAKASE, M., SHIMIZU, N., MIZUNO, B., and ODANAKA, S.: 'A 0.05μn-CMOS with ultra shallow source/drain junctions fabricated by 5keV ion implantation and rapid thermal annealing'. IEDM 1994, p. 485
2. RISCH, , KRAUTSCHNEIDER, W.H., HOFMANN, F., and SCHÄFER, H.: 'Vertical MOS transistor with 70nm channel length'. ESSDERC 1995, pp. 101-104
3. GOSSNER, H., WITTMANN, F., MANSCH, W., EISELE, I., GRABOLLA, T., and BEHAMMER, D.: 'Vertical MOS-technology with sub-0.1 μm channel lengths', Electron. Lett., 1995, 31, pp. 1394-1396
4. VESCAN, L.: 'Selective epitaxial growth of SiGe alloys-influence of growth parameters on film parameters', Mater. Sci. Eng, 1994, B28, pp. 1-8