Vertical Si-Metal-Oxide-Semiconductor Field Effect Transistors with Channel Lengths of 50 nm by Molecular Beam Epitaxy

Japanese Journal of Applied Physics

Volumn 33, Issue 4S, 1994, Pages 2423-

  Eisele, Ignaz ^a   Risch, Lothar ^b  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; BORON; CHARACTERIZATION; DIFFUSION IN SOLIDS; ELECTRON BEAMS; ETCHING; GATES (TRANSISTOR); MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SPUTTERING; SUBSTRATES;

CHANNEL LENGTH; DRAIN; INFRARED PYROMETRY; KNUDSEN CELLS; MESA SIDEWALK; SHORT CHANNEL BEHAVIOR;

MOSFET DEVICES;

EID: 0028405278     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.33.2423     Document Type: Article

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