Suppression of the floating-body effect using SiGe layers in vertical surrounding-gate MOSFETs

IEEE Transactions on Electron Devices

Volumn 48, Issue 12, 2001, Pages 2684-2689

  Date, Celisa K ^b   Plummer, James D ^a,b  

^a IEEE

^b STANFORD UNIVERSITY   (United States)

Author keywords

Avalanche breakdown; Floating body effect; Silicon compounds; Silicon germanium (SiGe); Source engineering; Vertical MOSFETs

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING SILICON COMPOUNDS;

BIPOLAR JUNCTION TRANSISTORS (BJT); FLOATING-BODY EFFECTS;

MOSFET DEVICES;

EID: 0035691691     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974690     Document Type: Article

References (9)

1. A surrounding gate transistor (SGT) cell for 64/256Mbit DRAMs
2. A novel high-density, low-voltage SRAM cell with a vertical negative differential resistance (NDR) device
3. A 3-D sidewall Flash EPROM cell and memory array
4. Multi-pillar surrounding gate transistor (M-SGT) for compact high-speed circuits
5. SiGe heterojunctions in epitaxial vertical surrounding-gate transistors
6. Elimination of parasitic bipolar-induced breakdown effects in ultra-thin SOI MOSFETs using narrow-bandgap-source (NBS) structure
7. x source structure
8. Suppression of the floating-body effect in partially-depleted SOI MOSFETs with SiGe source structure and its mechanism
9. An analytical breakdown model for short-channel MOSFETs