Etching characteristics and mechanisms of the MgO thin films in the CF4/Ar inductively coupled plasma

Microelectronic Engineering

Volumn 84, Issue 4, 2007, Pages 638-645

  Efremov, A ^a   Woo, J C ^b   Kim, G H ^b   Kim, C I ^b  

^a IVANOVO STATE UNIVERSITY OF CHEMISTRY AND TECHNOLOGY   (Russian Federation)

^b Chung Ang University   (South Korea)

Author keywords

Desorption; Dissociation; Etch mechanism; Etch rate; Ionization; MgO; Sputtering

Indexed keywords

CARRIER CONCENTRATION; ETCHING; INDUCTIVELY COUPLED PLASMA; LANGMUIR BLODGETT FILMS; MAGNESIUM COMPOUNDS; REACTION KINETICS;

ETCH RATE; GAS MIXING; LANGMUIR PROBE; SURFACE KINETICS;

THIN FILMS;

EID: 33847679674     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.12.006     Document Type: Article

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