Fabrication of c-axis oriented Pb(Zr, Ti)O3 thin films on Si(100) substrates using MgO intermediate layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 8, 1996, Pages 4195-4198

  Senzaki, Junji ^a   Mitsunaga, Osamu ^a   Uchida, Takahito ^a   Ueno, Tomo ^a   Kuroiwa, Koichi ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Digital MOCVD; Ferroelectric thin film; MgO intermediate layer; PZT; RF magnetron sputtering

Indexed keywords

FERROELECTRIC THIN FILM; INTERMEDIATE LAYER;

EXPERIMENTS; FABRICATION; FERROELECTRIC MATERIALS; MAGNETRON SPUTTERING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PEROVSKITE;

THIN FILMS;

EID: 0030205987     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.4195     Document Type: Article

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