Effect of gas mixing ratio on gas-phase composition and etch rate in an inductively coupled CF4/Ar plasma

Vacuum

Volumn 75, Issue 2, 2004, Pages 133-142

  Efremov, A M ^a   Kim, Dong Pyo ^a   Kim, Chang Il ^a  

^a Chung Ang University   (South Korea)

Author keywords

Dissociation; Etch rate; Ionization; Plasma

Indexed keywords

ARGON; CARRIER CONCENTRATION; EMISSION SPECTROSCOPY; ETCHING; INDUCTIVELY COUPLED PLASMA; LANGMUIR BLODGETT FILMS; OPTICAL DEVICES; SURFACE PROPERTIES;

ETCH RATE; GAS COMPOSITION; LANGMUIR PROBE (LP);

CARBON INORGANIC COMPOUNDS;

EID: 2942642454     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2004.01.077     Document Type: Article

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