Real dimensional simulation of silicon etching in CF 4 + O 2 plasma

Applied Surface Science

Volumn 201, Issue 1-4, 2002, Pages 96-108

  Knizikevicius R ^a  

^a KAUNAS UNIVERSITY OF TECHNOLOGY   (Lithuania)

Author keywords

CF 4 + O 2 plasma; Reactive ion etching; Silicon

Indexed keywords

ANISOTROPY; ASPECT RATIO; ION BOMBARDMENT; OXYGEN; PARAMETER ESTIMATION; PLASMA THEORY; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SILICA;

PLASMOCHEMICAL ETCHING (PCE);

SURFACE REACTIONS;

EID: 0037202556     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00558-5     Document Type: Article

References (16)

1. Oehrlein G.S., Robey S.W., Lindström J.L. Appl. Phys. Lett. 52 1988 1170-1172.
2. Oehrlein G.S., Chan K.K., Jaso M.A., Rubloff G.W. J. Vac. Sci. Technol. A 7 1989 1030-1034.
3. Oehrlein G.S. J. Vac. Sci. Technol. A 11 1993 34-46.
4. Mucha J.A., Donelly V.M., Flamm D.L., Webb L.M. J. Phys. Chem. 85 1981 3529-3532.
5. Hamaguchi S. IBM J. Res. Dev. 43 1999 199-217.
6. Knizikevičius R., Galdikas A., Grigonis A., Pranevičius L., Rutkūnienė Ž. Vacuum 47 1996 1473-1477.
7. Mogab C.J., Adams A.C., Flamm D.L. J. Appl. Phys. 49 1978 3796-3803.
8. d'Agostino R., Cramarossa F., De Benedictis S., Ferraro G. J. Appl. Phys. 52 1981 1259-1265.
9. M.A. Lieberman, A.J. Lichtenberg, Principles of Plasma Discharges and Materials Processing, Wiley, New York, 1994, p. 572.
10. Jacob W. Thin Solid Films 326 1998 1-42.
11. von Keudell A. Thin Solid Films 402 2002 1-37.
12. Ono K., Tuda M. Jpn. J. Appl. Phys. 36 1997 4854-4865.
13. Stoffels W.W., Stofells E., Haverlag M., Kroesen G.M.W., De Hoog F.J. J. Vac. Sci. Technol. A 13 1995 2058-2066.
14. Strobel H., Ohl A. J. Appl. Phys. 84 1998 4137-4152.
15. Knizikevičius R., Galdikas A. Lith. J. Phys. 41 2001 55-58.
16. H.W. Lehmann, in: W. Kaiser, W. E. Proebster (Eds.), Proceedings of the Fourth European Conference on Electrotechnics, Stuttgart, 1980, pp. 57-62.