High temperature performances of AlGaN/GaN power HFETs

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2003, Pages 221-224

  Nuttinck, S ^a   Banerjee, B ^a   Venkataraman, S ^a   Laskar, J ^a   Harris, M ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b GEORGIA TECH RESEARCH INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; HIGH TEMPERATURE APPLICATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

HIGH TEMPERATURE PERFORMANCES;

HETEROJUNCTIONS;

EID: 0042665557     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. P. Neudeck, R. Okojie, and L. Chen, "High-Temperature Electronics - A Role for Wide Bandgap Semiconductors?", Proceedings of the IEEE, Vol.90, No.6, pp.1065-1076, June 2002.
2. J. Wurfl, "Recent Advances in GaAs Devices for Use at High Temperatures", IEEE, pp.106-116, 1998.
3. S. Nuttinck, E. Gebara, J. Laskar, and M. Harris, "Study of Self-Heating Effects And Temperature-Dependent Modeling And Pulsed Load-Pull Measurements on GaN HEMTs", IEEE Trans. on M.T.T., Vol. 49, No 12, pp 2579-2587, Dec. 2001
4. S. Nuttinck, E. Gebara, J. Laskar. And M. Harris, "Development of GaN Wide bandgap Technology for Microwave Power Applications", IEEE Microwave Magazine, Vol.3, No.1, pp. 80-87, March 2002
5. L. Eastman, "Experimental Power-Frequency Limits of AlGaN/GaN HEMT's", IEEE MTT-S Digest, pp. 2273-2275, 2002.
6. N.Q. Zhang, S. Keller, G. Parish, S. Heikman, S.P. DenBaars, and U.K. Mishra, "High Breakdown GaN HEMT with Overlapping Gate Structure", IEEE Electron Device Letters, Vol. 21, No. 9, Sept. 2000.
7. S.T. Shepard, K. Doverspike, W.L. Pribble, S.T. Allen, J.W. Palmour, L.T. Kehias, and T.J. Jenkins, "High-Power Microwave GaN/AlGaN HEMT's On Semi-Insulating Silicon Carbide Subtrates", IEEE Electron Device Letters, Vol. 20, No 4, pp. 161-163, April 1999.
8. H. Chiu, S. Yang, and Y. Chan, "AlGaAs/InGaAs Heterostructure Doped-Channel FET's Exhibiting Good Electrical Performance at High Temperatures", IEEE Trans. on Electron Devices, Vol. 48, No.10, pp.2210-2215, October 2001.