Comparison of degradation modes in 1.2-2.1 nm thick SiO2 oxides submitted to uniform and hot carrier injections in NMOSFETS

Journal of Non-Crystalline Solids

Volumn 322, Issue 1-3, 2003, Pages 183-190

  Goguenheim, Didier ^a   Trapes, Céline ^a   Bravaix, Alain ^a  

^a Maison des Technologies   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; SILICA;

HOT CARRIER INJECTIONS;

MOSFET DEVICES;

EID: 0038109950     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(03)00200-X     Document Type: Conference Paper

References (14)

1. Hu C., Park D., King Y.C. Semicond. Int. 1998;215.
2. Semiconductor Industry Association (SIA), International Technology Roadmap for Semiconductors, 2001.
3. Vogel E.M., Suehle J.S., Edelstein M.D., Wang B., Chen Y., Bernstein J.B. IEEE Trans. Electron Dev. ED-47:2000;1183.
4. DiMaria D.J. J. Appl. Phys. 87:2000;8707.
5. DiMaria D.J. J. Appl. Phys. 86:1999;2100.
6. Goguenheim D., Bravaix A., Vuillaume D., Mondon F., Jourdain M., Meinertzhagen A. J. Non-Cryst. Solids. 245:1999;41.
7. Lime F., Ghibaudo G., Guégan G. Microelectron. Reliab. 41:2001;1421.
8. Zander D., Saigné F., Meinertzhagen A. Microelectron. Reliab. 41:2001;1355.
9. Esseni D., Selmi L. IEEE Trans. Electron Dev. ED-46:1999;369.
10. Bravaix A., Goguenheim D., Revil N., Vincent E. Microelectron. Eng. 59:2001;101.
11. Chen W., Ma T. IEEE Electron Dev. Lett. 12:1991;393.
12. Ghetti A., Sangiorgi E., Bude J., Sorsch T.W., Weber G. IEEE Trans. Electron Dev. ED-47:2000;2358.
13. Meinertzhagen A., Petit C., Zander D., Simonetti O., Maurel T., Jourdain M. J. Appl. Phys. 91:2002;2123.
14. Groeseneken G., Maes H.E., Beltran N., De Keersmaecker R.F. IEEE Trans. Electron Dev. ED-31:1984;42.