New insights into the change of voltage acceleration and temperature activation of oxide breakdown

Microelectronics Reliability

Volumn 43, Issue 8, 2003, Pages 1211-1214

  Ribes, G ^a   Bruyere S ^a   Monsieur, F ^a,b   Roy, D ^a   Huard, V ^c  

^a STMICROELECTRONICS   (France)

^b Grenoble INP Phelma   (France)

^c NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CORRELATION METHODS; ELECTRIC BREAKDOWN; GATES (TRANSISTOR);

TEMPERATURE ACTIVATION;

MOS DEVICES;

EID: 0041663663     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00174-4     Document Type: Conference Paper

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