Low voltage SILC and P- and N-MOSFET gate oxide reliability

Microelectronics Reliability

Volumn 45, Issue 3-4, 2005, Pages 479-485

  Petit, C ^a   Meinertzhagen, A ^a   Zander, D ^a   Simonetti, O ^a   Fadlallah, M ^a   Maurel, T ^a  

^a UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DEGRADATION; ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HOLE MOBILITY; STRESS ANALYSIS;

GATE CURRENT; GATE OXIDES; LOW VOLTAGE EFFECTS; NEGATIVE STRESS;

MOSFET DEVICES;

EID: 15744373011     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.08.002     Document Type: Article

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