Electrical characteristics of metal-insulator-semiconductor Schottky diodes using a photowashing treatment in AlxGa1-xAs/InGaAs (X=0.75) pseudomorphic high electron mobility transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 5, 2003, Pages 2133-2137

  Han, Sang Youn ^a   Choi, Kyoung Jin ^a   Lee, Jong Lam ^a   Mun, Jae Kyoung ^b   Park, Min ^b   Kim, Haechon ^b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ELECTRIC PROPERTIES; INTERFACES (MATERIALS); MATHEMATICAL MODELS; PHOTOEMISSION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS; SYNCHROTRON RADIATION; THICKNESS MEASUREMENT; WASHING;

PHOTOWASHING TREATMENT; SCHOTTKY BARRIER HEIGHT; SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0242509082     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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