Depletion layer and contact capacitance in non-uniformly doped semiconductors

Journal of Physics D: Applied Physics

Volumn 35, Issue 22, 2002, Pages 2988-2993

  Shik, A ^a   Ruda, H E ^a   Pelinovsky, D ^b   Craig, W ^b  

^a UNIVERSITY OF TORONTO   (Canada)

^b MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY VALUE PROBLEMS; CAPACITANCE; ELECTRIC CONTACTS; ELECTRONS; PERTURBATION TECHNIQUES; POISSON EQUATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; VARIATIONAL TECHNIQUES;

CONTACT CAPACITANCE; DEPLETION LAYER; DOPING IMPURITIES; ELECTRON CHARGE; SCHOTTKY DEPENDENCE;

SEMICONDUCTOR MATERIALS;

EID: 0037153336     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/35/22/313     Document Type: Article

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