Growth and Temperature Dependence of Optical Properties of Er Doped and Undoped n-Type InSe

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 9 A, 1999, Pages 5133-5136

  Gürbulak, Bekir ^a   Yildirim, Muhammet ^a   Ateç, Aytunç ^a   Doǧan, Seydi ^a   Yoǧurtçu, Yahya Kemal ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Absorption; Binding energy; Exciton energy; Inse; Lnse:er; Single crystals; Urbach rule

Indexed keywords

BINDING ENERGY; CRYSTAL GROWTH; ERBIUM; EXCITONS; LIGHT ABSORPTION; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; THERMAL EFFECTS;

INDIUM SELENIDE; URBACH RULE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0342733422     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.5133     Document Type: Article

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