Interface state generation in pFETs with ultra-thin oxide and oxynitride on (100) and (110) Si substrates

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 126-129

  Stathis, J H ^a   Bolam, R ^b   Yang, M ^a   Hook, T B ^b   Chou, A ^c   Larosa, G ^c  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

^c Microelectronics Division   (United States)

Author keywords

Crystal orientation; NBTI; Oxynitride

Indexed keywords

CONDUCTION BAND (CB); NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); OXYNITRIDE; P-FETS;

BAND STRUCTURE; CRYSTAL ORIENTATION; DIELECTRIC FILMS; HOLE TRAPS; LEAKAGE CURRENTS; NITRIDES; SILICON COMPOUNDS; ULTRATHIN FILMS;

GATES (TRANSISTOR);

EID: 19944387295     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.027     Document Type: Conference Paper

References (6)

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5. S. Maeda Intl. Reliability Physics Symposium 2004 8 12
6. S. Zafar et al., to be presented, IEEE VLSI-TSA International Symposium on VLSI Technology, Taiwan (2005).