Influence of implantation temperature and dose rate on secondary defect formation in 4H-SiC

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 823-826

  Ohno, Toshiyuki ^a   Amemiya, Kensuke ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

Dislocation loops; Ion implantation; Nucleation; Secondary defects; TEM

Indexed keywords

DEFECTS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ION IMPLANTATION; NUCLEATION; TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS; DIFFUSION; HIGH TEMPERATURE EFFECTS; SUPERSATURATION;

DISLOCATION LOOP; HIGH DOSE RATE; HIGH TEMPERATURE; IMPLANTATION ENERGIES; IMPLANTATION TEMPERATURE; INTERSTITIALS; SECONDARY DEFECT; SUPERSATURATION RATIO; SECONDARY DEFECTS;

SILICON CARBIDE;

EID: 0036429054     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.823     Document Type: Conference Paper

References (7)

1. T. Ohnoand N. Kobayashi: J. Appl. Phys. Vol. 89 (2001), p. 933
2. T. Ohno and N. Kobayashi: Material Research Society Proceeding Vol. 640 (2001), H5.29
3. T. Ohno and N. Kobayashi: submitted to J. Appl. Phys.
4. K Amemiya, J. Ito and K Tokiguchi: Proc. of Int. Conf. on Ion Implantation Technology (1998).
5. M. Heimendahl: Electron Microscopy of Materials (Academic Press, New York, 1980).
6. A. Ookawa: Crystal Growth (Syokabo, Tokyo, 1977).
7. E. Rimini: Ion Implantation: Basics to Device Fabrication (Kluwer, Boston, 1995).