Electronic stopping cross sections in silicon carbide for low-velocity ions with 1≤Z1≤15

Journal of Applied Physics

Volumn 96, Issue 1, 2004, Pages 164-169

  Janson, M S ^a,b   Linnarsson, M K ^a   Hallen A ^a   Svensson, B G ^a,c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UNIVERSITY OF HAMBURG   (Germany)

^c UNIVERSITY OF OSLO   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; APPROXIMATION THEORY; CARBON; COMPUTATIONAL METHODS; DATA REDUCTION; ELECTRONS; HEAVY IONS; ION BEAMS; ION IMPLANTATION; MONTE CARLO METHODS; PARAMETER ESTIMATION; SWELLING;

ATOMIC NUMBER; CROSS SECTIONS; ELECTRONIC STOPPING; MATERIAL SYSTEMS;

SILICON CARBIDE;

EID: 3142747642     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1737810     Document Type: Article

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