Experimental evidence for an electrically neutral (N-Si)-complex formed during the annealing process of Si+-/N+-co-implanted 4H-SiC

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 641-644

  Schmid, F ^a   Frank, T ^a   Pensl, G ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Donor deactivation; Ion implantation; Nitrogen donors

Indexed keywords

ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; HALL EFFECT; THERMAL EFFECTS;

DONOR DEACTIVATION; NEUTRAL DEFECTS; NITROGEN DONORS;

SILICON CARBIDE;

EID: 30344484157     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.641     Document Type: Conference Paper

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