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Applied Surface Science

Volumn 184, Issue 1-4, 2001, Pages 263-267

Nitrogen passivation by implantation-induced point defects in 4H-SiC epitaxial layers

(4) Aberg D a Hallen A a Pellegrino, P a Svensson, B G a

a ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

4H SiC; Ion implantation; Passivation; Point defects

Indexed keywords

CHARGE CARRIERS; CRYSTAL LATTICES; DISSOCIATION; EPITAXIAL GROWTH; ION IMPLANTATION; PASSIVATION; POINT DEFECTS;

DIFFUSION DOPING;

SILICON CARBIDE;

EID: 0035852257 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(01)00506-2 Document Type: Article

Times cited : (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.