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Volumn 5753, Issue I, 2005, Pages 368-379

The effects of chemical gradients and photoresist composition on lithographically generated line edge roughness

Author keywords

Acid diffusion; Asymmetric magnification; Base diffusion; Base quencher; Chemically amplified photoresist; Contrast; Image fading; Intrinsic bias; Line edge roughness; Photolithography

Indexed keywords

ACIDS; AERIAL PHOTOGRAPHY; COMPUTER SIMULATION; CONCENTRATION (PROCESS); DIFFUSION; IMAGE PROCESSING; IMAGING TECHNIQUES; PHOTOLITHOGRAPHY; POLYMERS; QUENCHING; THIN FILMS;

EID: 24644509911     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.599848     Document Type: Conference Paper
Times cited : (76)

References (25)
  • 1
    • 24644487061 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors (ITRS), Semiconductor Industry Association, 2003
    • International Technology Roadmap for Semiconductors (ITRS), Semiconductor Industry Association, 2003.
  • 19
    • 24644497269 scopus 로고    scopus 로고
    • In Doctoral Thesis for The Department of Chemical Engineering: Top Surface Imaging for Sum 100-nm Lithography: The University of Texas at Austin: Austin, TX
    • Jamieson, A. T. In Doctoral Thesis for The Department of Chemical Engineering: Top Surface Imaging for Sum 100-nm Lithography: The University of Texas at Austin: Austin, TX, 2004.
    • (2004)
    • Jamieson, A.T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.