Selective wet removal of hf-based layers and post-dry etch residues in high-k and metal gate stacks

Solid State Phenomena

Volumn 103-104, Issue , 2005, Pages 93-96

  Claes, M ^a   Paraschiv, V ^a   Beckx, S ^a   Demand, M ^a   Deweerd, W ^a   Garaud, S ^a   Kraus, H ^b   Vos, R ^a   Snow, J ^a   Boullart, W ^a   De Gendt, S ^a,c  

^a IMEC   (Belgium)

^b SEZ AG   (Austria)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Dry etch residue removal; High k; Metal gate; Selective wet etching

Indexed keywords

EID: 33745680834     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.103-104.93     Document Type: Conference Paper

References (4)

1. M. Claes et al., The Electrochemical Society Proceedings Series (2003) Physics and Technology of High-K Gate Dielectrics – II (Pennington, NJ, 2003).
2. H. Kraus et al., Selective wet etching of Hf-based layers on a single wafers spin processor, submitted to ISTC Conference, Shangai, China, 2004.
3. V. Paraschiv et al., to be published in proceedings of this conference (UCPSS 2004).
4. S. Beckx et al., to be published in proceedings of Workshop on Dielectrics in Microelectronics, WODIM, 28-30 June, Ireland 2004.