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Journal of the Korean Physical Society

Volumn 49, Issue 4, 2006, Pages 1530-1535

Electron behavior and impurity properties as functions of growth temperature for InN grown by using plasma-assisted molecular beam epitaxy

(9) Hwang, E S a Park, E M a Suh, E K a Hong, C H a Lee, H J a Wang, X b Che, S B b Ishitani, Y b Yoshikawa, A b

a Chonbuk National University (South Korea)

b CHIBA UNIVERSITY (Japan)

Author keywords

Impurity states; InN layers; n type; Scattering mechanisms

Indexed keywords

EID: 33751025501 PISSN: 03744884 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (4)

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