Structural, optical, and electrical characterization of gadolinium oxide films deposited by low-pressure metalorganic chemical vapor deposition

Journal of Applied Physics

Volumn 96, Issue 10, 2004, Pages 5631-5637

  Singh, M P ^a   Thakur, C S ^a   Shalini, K ^a   Banerjee, S ^b   Bhat, N ^a   Shivashankar, S A ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b SAHA INSTITUTE OF NUCLEAR PHYSICS   (India)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTERFACIAL ENERGY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUARTZ; SCANNING ELECTRON MICROSCOPY; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

DIELECTRIC CONSTANTS; GADOLINIUM OXIDE (GD2O3); GROWTH TEMPERATURE; OPTICAL BAND GAP;

GADOLINIUM;

EID: 9944258594     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1801157     Document Type: Article

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