Anomalous safe operating area and hot carrier degradation of NLDMOS devices

IEEE Transactions on Device and Materials Reliability

Volumn 6, Issue 3, 2006, Pages 364-370

  Brisbin, Douglas ^a,b   Lindorfer, Philipp ^b   Chaparala, Prasad ^a,b  

^a IEEE   (United States)

^b NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

Charge pumping; Hot carrier; LDMOS; Power devices; Safe operating area (SOA)

Indexed keywords

CHARGE PUMPING; DRAIN DRIFT IMPLANTS; N-CHANNEL LATERAL DMOS (NLDMOS); SAFE OPERATING AREA (SOA);

AUTOMOTIVE ENGINEERING; ELECTRIC POTENTIAL; ELECTRIC POWER SYSTEMS; HOT CARRIERS; RELIABILITY THEORY; TELECOMMUNICATION SYSTEMS; TRANSISTORS;

MOS DEVICES;

EID: 33750796472     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2006.883558     Document Type: Article

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