A two mask complementary LDMOS module integrated in a 0.25 μm SiGe:C BiCMOS platform

ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference

Volumn , Issue , 2004, Pages 121-124

  Ehwald, K E ^a   Fischer, A ^a   Fuernhammer, F ^a   Winkler, W ^a   Senapati, B ^a   Barth, R ^a   Bolze, D ^a   Heinemann, B ^a   Knoll, D ^a   Ruecker, H ^a   Schmidt, D ^a   Shevchenko, I ^a   Sorge, R ^a   Wulf, H E ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COSTS; ELECTRIC BREAKDOWN; MASKS; MOS CAPACITORS; POWER AMPLIFIERS; SEMICONDUCTING BISMUTH COMPOUNDS; TRANSISTORS;

FIXED LOW DRIFT LENGTH; GATE REGION; P-LDMOS TRANSISTORS; POWER SWITCHES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 20244386982     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. K.-E. Ehwald, B. Heinemann, W. Roepke, W. Winkler, H. Rücker, F. Fuernhammer, D. Knoll, R. Barth, B. Hunger, H.E. Wulf, R. Pazirandeh, and N. Ilkov, "High Performance RF LDMOS Transistors with 5nm Gate Oxide in a 0.25μm SiGe:C BiCMOS Technology", IEDM Tech Dig., pp. 895 (2001)
2. nd European Solid-State Device Research Conference
3. D. Knoll, K.-E. Ehwald, B. Heinemann, A. Fox, K. Blum, H. Rücker, F. Fürnhammer, B. Senapati, R. Barth, U. Haak, W. Höppner, J. Drews, R. Kurps, S. Marschmeyer, H.H. Richter, T. Grabolla, B. Kuck, O. Fursenko, P. Schley, B. Tillack, Y. Yamamoto, K. Köpke, H.-E. Wulf, D. Wolansky and W. Winkler, "A Flexible, Low-Cost, High Performance SiGe:C BiCMOS Process with a One-Mask HBT Module", IEDM Tech Dig., pp. 775 (2002)