Electrical characteristics and reliability of extended drain voltage NMOS devices with multi-resurf junction

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 565-572

  Vashchenko, V A ^a   Brisbin, D ^a   Lindorfer, P ^a   Chaparala, P ^a   Hopper, P ^a  

^a NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

Breakdown, reliability; Extended drain voltage MOS; Hot carrier degradation; RESURF LDMOS

Indexed keywords

BREAKDOWN, RELIABILITY; EXTENDED DRAIN VOLTAGE MOS; HOT CARRIER DEGRADATION; RESURF LDMOS;

ELECTRIC POTENTIAL; HOT CARRIERS; RELIABILITY; SEMICONDUCTOR JUNCTIONS;

MOS DEVICES;

EID: 28744453583     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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