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Volumn , Issue , 2005, Pages 555-559

Electron trapping and interface trap generation in drain extended pMOS transistors

Author keywords

Charge pumping; DeMOS; Hot carrier; Interface trap generation; Oxide traps

Indexed keywords

CHARGE PUMPING; DEMOS; INTERFACE TRAP GENERATION; OXIDE TRAPS;

EID: 28744454313     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (38)

References (11)
  • 4
    • 0032665190 scopus 로고    scopus 로고
    • Experimental study of hot-carrier effects in LDMOS transistors
    • R. Versari and A. Pieracci, "Experimental Study of Hot-Carrier Effects in LDMOS Transistors", IEEE Transactions on Electron Devices, 46, (1999), pp1228-1233.
    • (1999) IEEE Transactions on Electron Devices , vol.46 , pp. 1228-1233
    • Versari, R.1    Pieracci, A.2
  • 6
    • 0032138065 scopus 로고    scopus 로고
    • A new degradation method for hot-carrier degradation in DMOS transistors
    • A. Pieracci and B. Ricco, "A New Degradation Method for Hot-Carrier Degradation in DMOS Transistors", IEEE Transactions on Electron Devices, 45, (1998), pp1855-1858.
    • (1998) IEEE Transactions on Electron Devices , vol.45 , pp. 1855-1858
    • Pieracci, A.1    Ricco, B.2
  • 8
    • 0024705114 scopus 로고
    • Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation
    • P. Heremans, J. Witters, G. Groeseneken and H. Maes, "Analysis of the Charge Pumping Technique and Its Application for the Evaluation of MOSFET Degradation", IEEE Transactions on Electron Devices, 36, (1989), pp1318-1335.
    • (1989) IEEE Transactions on Electron Devices , vol.36 , pp. 1318-1335
    • Heremans, P.1    Witters, J.2    Groeseneken, G.3    Maes, H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.