Safe operating area - A new frontier in Ldmos design

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2002, Pages 1-8

  Hower, Philip L ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; LOGIC DESIGN; OPTIMIZATION; THERMAL EFFECTS;

SAFE OPERATING AREA (SOA);

MOS DEVICES;

EID: 0036049992     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)