New adaptive Resurf concept for 20 V LDMOS without breakdown voltage degradation at high current

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1998, Pages 65-68

  Kinoshita, Kozo ^a   Kawaguchi, Yusuke ^a   Nakagawa, Akio ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE STRUCTURES; STATIC ELECTRICITY;

RESURF CONCEPT;

MOS DEVICES;

EID: 0031634556     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)