High power LDMOS for cellular base station applications

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 107-110

  Shindo, M ^a   Morikawa, M ^a   Fujioka, T ^a   Nagura, K ^a   Kurotani, K ^a   Odaira, K ^a   Uchiyama, T ^a   Yoshida, I ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR RADIO SYSTEMS; DOPING (ADDITIVES); HOT CARRIERS; SEMICONDUCTING SILICON;

CELLULAR BASE STATIONS;

MOS DEVICES;

EID: 0034822555     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

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2. rd generation cellular base stations
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7. High efficiency 2-GHz Si-MOSFET design under low supply voltage down to 1V
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9. A 3.6 V 4 W 0.2 cc Si power MOS-amplifier module for GSM handset phones
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11. High-frequency high-power Si-MOSFET device technology
12. 120 watt, 2GHz, Si LDMOS RF power transistor for PCS base station applications
13. High power RF-LDMOS transistors for wireless communication base station applications