Safe operating area considerations in Ldmos transistors

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 1999, Pages 55-58

  Hower, P ^a   Lin, J ^a   Haynie, S ^a   Paiva, S ^a   Shaw, R ^a   Hepfinger, N ^a  

^a Unitrode Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON;

SAFE OPERATING AREA; SILICON POWER DENSITY;

MOSFET DEVICES;

EID: 0032598949     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (10)