Simulation of the surface trap effect on the gate lag in GaAs MESFETs

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

Volumn 85, Issue 2, 2002, Pages 18-26

  Hasumi, Yumiko ^a   Kodera, Hiroshi ^a  

^a CHIBA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Dc characteristics; Device simulation; GaAs MESFET; Gate lag; Surface trap

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRODES; ELECTRON TRAPS; ENERGY GAP; GATES (TRANSISTOR); LINEARIZATION; MATRIX ALGEBRA; POISSON EQUATION; SEMICONDUCTING GALLIUM ARSENIDE; THRESHOLD VOLTAGE;

DC CHARACTERISTICS; DEVICE SIMULATION; GATE LAG; SHORT CHANNEL EFFECT; SURFACE TRAP EFFECT;

MESFET DEVICES;

EID: 0036472373     PISSN: 8756663X     EISSN: None     Source Type: Journal    
DOI: 10.1002/ecjb.1089     Document Type: Article

References (9)

1. Frequency dispersion and modulated signal distortion characteristics of GaAs power MESFETs in large-signal operation
2. Low-frequency transconductance dispersion in InAlAs/InGaAs/InP HEMTs with single-and double-recessed gate structures
3. New and unified model for Schottky barrier and II-V insulator interface states formation
4. Numerical analysis of frequency dispersion of transconductance in GaAs MESFETs
5. Two-dimensional analysis of surface-state effects on turn-on characteristics in GaAs MESFETs
6. Large-signal modeling of GaAs MESFET operation
7. Two-dimensional analysis of the surface recombination effect on current gain for GaAlAs/GaAs HBTs
8. Interface charge modulation by field-modulating plate in a high power FET