Time-dependent dielectric breakdown in poly-Si CVD HfO2 gate stack

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2002, Pages 409-414

  Lee, S J ^a   Lee, C H ^a   Choi, C H ^a   Kwong, D L ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRODES; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; POLYSILICON;

DIELECTRIC BREAKDOWN;

GATES (TRANSISTOR);

EID: 0036082006     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (21)

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