Improvement of interfacial layer reliability by incorporation of deuterium into HfAlOx formed by D2O-ALD

IEEE Electron Device Letters

Volumn 26, Issue 10, 2005, Pages 722-724

  Torii, Kazuyoshi ^a,b   Kawahara, Takaaki ^a,c   Shiraishi, Kenji ^d  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b HITACHI LTD   (Japan)

^c RENESAS TECHNOLOGY CORP   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Atomic layer deposition (ALD); Charge trapping; Deuterium; High ; Interfacial layer; Time dependent dielectric breakdown (TDDB)

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEPOSITION; DEUTERIUM; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HEAVY WATER; INTERFACES (MATERIALS); RELIABILITY; SECONDARY ION MASS SPECTROMETRY;

ATOMIC LAYER DEPOSITION (ALD); CHARGE TRAPPING; INTERFACIAL LAYER; TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

MISFET DEVICES;

EID: 27144524271     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.855416     Document Type: Article

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