Electrical characteristics of high-κ dielectric film grown by direct sputtering method

Solid-State Electronics

Volumn 50, Issue 2, 2006, Pages 237-240

  Sen, Banani ^a   Sarkar, C K ^a   Wong, Hei ^b   Chan, M ^c   Kok, C W ^c  

^a JADAVPUR UNIVERSITY   (India)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Charge trapping; Hafnium oxide; Reliability

Indexed keywords

ANNEALING; CAPACITANCE; ELECTRIC CHARGE; ELECTRIC POTENTIAL; FILM GROWTH; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; OPTIMIZATION; RELIABILITY; SPUTTERING;

CHARGE TRAPPING; GATE DIELECTRICS; HAFNIUM OXIDE;

DIELECTRIC FILMS;

EID: 32344452886     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.11.010     Document Type: Article

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