Charge trapping in SiO2/HfO2/TiN gate stack

Microelectronics Reliability

Volumn 43, Issue 9-11, 2003, Pages 1445-1448

  Lime, F ^a   Ghibaudo, G ^a   Guillaumot, B ^b,c  

^a IMEP LAHC   (France)

^b CEA LETI   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC CHARGE; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; SILICA; TITANIUM NITRIDE;

DRAIN CURRENTS;

CMOS INTEGRATED CIRCUITS;

EID: 0042694474     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00256-7     Document Type: Conference Paper

References (10)

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4. 2 gate dielectric WODIM 2002 Proc, to be published in SSE 2003.
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8. nd edition. Wiley, New York, 1981.
9. Zhu WJ, Ma TP, Zafar S, Tamagawa T. Charge trapping in ultrathin hafnium oxide. IEEE Elec. Dev. Lett., vol. 23, No 10, October 2002.
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