Novel dielectric breakdown model of Hf-silicate with high temperature annealing

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2003, Pages 34-40

  Yamaguchi, Takeshi ^a   Ino, Tsunehiro ^a   Satake, Hideki ^a   Fukushima, Noburu ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE DIELECTRICS;

HAFNIUM COMPOUNDS;

EID: 0038310328     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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