Nature effect of the gas during high temperature treatments of 4H-SiC substrates

Applied Surface Science

Volumn 207, Issue 1-4, 2003, Pages 200-207

  Younes, Ghassan ^a   Ferro, Gabriel ^b   Jacquier, Christophe ^b   Dazord, Jacques ^b   Monteil, Yves ^b  

^a BEIRUT ARAB UNIVERSITY   (Lebanon)

^b UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

Author keywords

4H SiC; High temperature treatment; Nitrogen; Surface morphology; Thermodynamic calculations

Indexed keywords

ANNEALING; CRYSTAL GROWTH; HIGH TEMPERATURE APPLICATIONS; MORPHOLOGY; SILICON CARBIDE; SUBSTRATES;

BUNCHED SURFACES;

SURFACE TREATMENT;

EID: 0037470365     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)01326-0     Document Type: Article

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