Octahedral-structured gigantic precipitates as the origin of gate-oxide defects in metal-oxide-semiconductor large-scale-integrated circuits

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 812-817

  Itsumi, Manabu ^a   Akiya, Hideo ^a   Ueki, Takemi ^a   Tomita, Masato ^a   Yamawaki, Masataka ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Copper decoration; Czochralski silicon; Octahedral structure; Oxide defcts; Vacancies; Void

Indexed keywords

COPPER; CRYSTAL GROWTH; CRYSTAL STRUCTURE; GATES (TRANSISTOR); LSI CIRCUITS; MODELS; MOS DEVICES; SEMICONDUCTING SILICON; SILICA; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

COPPER DECORATION; CZOCHRALSKI SILICON; GIGANTIC PRECIPITATES; OCTAHEDRAL STRUCTURE; VACANCIES; VOIDS; WAFER SLICING;

CRYSTAL DEFECTS;

EID: 0030087008     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.812     Document Type: Article

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